| 摘要 |
PURPOSE:To improve quality at a hetero interface, by inserting a group III atom layer into the hetero interface, in which compositional change is necessary for a group V element in a III-V compound semiconductor. CONSTITUTION:A hetero-interface is formed between layers 11 and 13 made of III-V compound, each containing group III element 3A or 3B together with a different group V element 5A or 5B. Then, a metal layer 12 made of atoms 3C is inserted in the hetero-interface. In this case, chemical bonding force between two elements 3C-5A is almost equal to that to two elements 3C-5B or an expression of inequality 3C-5A>3C-5B is satisfied. In the III-V compound layer 11, atomic substitution of the atoms 5B for the atoms 5A can be reduced, and thereby a hetero-interface of high quality can be obtained. |
