| 摘要 |
<p>PURPOSE:To enhance the resolution of a pattern to be exposed in the same manner in a case where a phase shift mask is used even when a photomask in conventional cases is used. CONSTITUTION:A projection aligner is provided with a condenser lens system 2 which illuminates a photomask 4 and with a projection optical system 5 which projects a pattern image on the photomask 4 onto a wafer 6. In the projection aligner, an auxiliary photomask 3 having a pattern similar to the pattern of the photomask 4 is arranged on the side of the condenser lens system 2 with reference to the photomask 4, and the photomask 4 is illuminated by the use of diffracted light radiated from the auxiliary photomask 3.</p> |
