| 摘要 |
PURPOSE: To enable etching to be carried out high in controllability so as to easily improve a capacitor in capacitance by a method wherein multi-cylindrical storage electrodes are provided so as to come into contact with the surface of a semiconductor substrate through a contact hole bored in an insulating film, a dielectric film is provided thereon, and a plate electrode is formed thereon. CONSTITUTION: A third silicon oxide film 25 is etched using a projection 27 and a triple edge 33 as a mask to form a configuration of a center pillar formed of the silicon oxide film 25 and multiple cylinders which surround the center pillar. A fourth polycrystalline silicon film 30 is formed thereon. Then, polycrystalline silicon films 30, 28, 27, and 24 are etched back deeper than the thickness of the fourth polycrystalline silicon film 30. Next, the third silicon oxide film 25 and the second silicon oxide film 23 are removed with an HF- containing solution, whereby a storage electrode 31 of quadruple cylindrical structure can be formed. |
