| 摘要 |
PURPOSE:To allow formation of a capacitor in which irregularities and capacitance are ensured efficiently by forming storage electrodes of individual capacitors concurrently with formation of pleat type irregular pattern on an electrode using a fine irregular pattern, formed with high density on the surface of the storage electrode of a stacked capacitor, as a mask. CONSTITUTION:An irregular pattern 4' is formed with high density in a capacitor forming region on a first conductive film 3 and then it is subjected to etching upto the way of the first conductive film 3 thus forming an irregular pattern of storage electrode 3' on the capacitor forming region. At the same time, the first conductive film 3 is removed through etching except the capacitor forming region thus defining the storage electrode 3'. Subsequently, resist film 4 is removed from the first conductive film 3 and a dielectric film 5 is applied on the patterned first conductive film 3. A second conductive film 6 is then formed on the semiconductor substrate 1 and subjected to patterning thus producing an opposing electrode 6'. This method produces irregularities on the surface of stacked capacitor and individual capacitors through single patterning operation. |
