| 摘要 |
PURPOSE: To have superior RDS ON-resistance characteristic and have a small transistor area region by a method wherein there are provided a source, a drain and a gate in a trench of a lateral power transistor structure. CONSTITUTION: In a multiple-cell/top/drain/trench type RESRE DMOS transistor 50, a gate 26 is in a trench between a source 20 and a drain 16, and a trench is backed by unequal oxides 24a, 24b, to form the gate 26. Accordingly, in a trench-type DMOS transistor 50, a cell pitch W is significantly small and the degree of integration of individual transistor cell is increased, and a number of channel regions are obtained per unit transistor area region. An RDS on is inversely proportional to a transistor area region, and an increase in a channel for a given silicon area region reduces a transistor RDS. |
