| 摘要 |
PURPOSE:To provide a homojunction semiconductor device having an improved device characteristic, which can be matched with the semiconductor thin film made of I-III-(IV)2 chalcopyrite compound in its lattice constant, its orientation quality to substrate surface and its surface mohology and to provide a photoelectric conversion semiconductor device using the same. CONSTITUTION:On an Mo lower electrode, an element having CuInSe2, ZnO and ITO thin films is manufactured. An ionic radiation of nitrogen atom is acceleration-projected thereon, and a homojunction is formed in the CuInSe2 thin film, and thereby, a photoelectric conversion semiconductor device is created. |
