发明名称 |
RESIST PATTERN FORMING METHOD |
摘要 |
PURPOSE:To form a negative resist pattern free of residue at an unexposed part. CONSTITUTION:When at least an acid generating agent and a crosslinking agent are added to phenolic resin to obtain a resist, the phenolic resin is prepd. by removing a low mol.wt. component with a good solvent and a poor solvent. A substrate to be treated is coated with the resulting resist, this resist is selectively exposed with ionized radiation and the unexposed part is dissolved by development to form the objective resist pattern. |
申请公布号 |
JPH0695370(A) |
申请公布日期 |
1994.04.08 |
申请号 |
JP19920248044 |
申请日期 |
1992.09.17 |
申请人 |
FUJITSU LTD |
发明人 |
MIZUSHIMA MASAKO;KANEMITSU HIDEYUKI;YAMAMOTO YUICHI |
分类号 |
G03F7/004;G03F7/023;G03F7/029;G03F7/038;G03F7/38;H01L21/027 |
主分类号 |
G03F7/004 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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