Heteroepitaktisch abgeschiedenes Diamant

摘要

The invention pertains to a process for producing heteroepitaxial diamond layers on Si substrates by means of chemical vapor deposition and common process gases, wherein (a) the Si surface is pretreated by creating a vacuum and heating the Si substrate to temperatures greater than 300 DEG C, preferably between 600 and 1100 DEG C; (b) a nucleation phase is carried out with a negative bias voltage applied in the range of -60 to -300 volts at a substrate temperature of 400 to 1100 DEG C; (c) the diamond deposition is carried out under per se known conditions without applying a bias voltage.