Analysis of impurities in silicon chips - by melting chips, producing wafer, and determining concn. of impurities
摘要
Analysis of impurities in irregularly formed Si chips comprises (a) selecting zone-melting Si chips; (b) zone-melting the chips to distribute surface impurities of the chips in a Si single crystal; (c) producing a single crystalline Si wafer; and (d) determining the concn. of the impurities present in the wafer. USE/ADVANTAGE - For analysing electronic components such as rectifiers and transistors. The process can detect impurities present in small amts.
申请公布号
DE4330598(A1)
申请公布日期
1994.04.07
申请号
DE19934330598
申请日期
1993.09.09
申请人
HEMLOCK SEMICONDUCTOR CORP., HEMLOCK, MICH., US
发明人
BOURBINA, MICHAEL, MIDLAND, MICH., US;HWANG, LYDIA LEE-YORK, MIDLAND, MICH., US;LUNA, JOAQUIN ENRIQUE, SAGINAW, MICH., US;WHEELOCK, SCOTT ALLEN, FREELAND, MICH., US