Method of making a buried heterostructure laser.

摘要

InP-based buried heterostructure lasers are made by a process that involves forming a mesa by a reactive ion etch (RIE), followed by "second growth" of In- and P-containing material by a vapor deposition process, with the deposition gas comprising a halogen (typically Cl)-containing species. Carrying out the process in such a manner that, at the start of the second growth, the semiconductor surface is substantially free of damage can result in lasers having improved properties. A preferred embodiment of the invention comprises a light chemical etch of the semiconductor surface after completion of RIE. Exemplarily, the etchant is 8HBr:2H2O2 (30%):90H2O, and about 100 nm of material are removed. <IMAGE>