| 摘要 |
<p>PURPOSE:To enhance an integration degree as the whole and simplify a prduction process by forming an emitter semiconductor layer throughout the cell region divided by V grooves. CONSTITUTION:One-conductive type semiconductor layer 3 is grown epitaxially on semiconductor substrate 1, and the surface is divided by V grooves 4 to provide cell 5, and polycrystal silicon 7 is buried in V grooves 4 through insulating film 6, thereby constituting a junction breaking prorammable ROM. Throughout the surface of layer 3 in epitaxially grown layer 3 in cell 5 divided bt V grooves 4, the other-conductive type base semiconductor layer 9 and one-conductive type emitter semiconductor layer 11 are formed hierarchically. Further, an emitter electrode is formed on layer 11, and respective sides of layers 9 and 11 and the emitter electrode reach V grooves 4. As the result, the area of cell region 5 can be reduced.</p> |
