发明名称 |
Multiblock semiconductor storage device including simultaneous operation of a plurality of block defect determination circuits |
摘要 |
A semiconductor storage device including a plurality of blocks each having an array of memory cells includes an exclusive OR circuit provided in each of the plurality of blocks for making a determination as to whether data written in memory cells in the blocks are normally read. Exclusive OR circuits of a plurality of memory cell array blocks are connected to an OR circuit. With an output signal from the OR circuit, a determination is made as to whether a plurality of memory cell array blocks are normal or not. Since test data from a plurality of memory cell array blocks are simultaneously examined by an OR circuit, a test time for the semiconductor storage device can be reduced.
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申请公布号 |
US5301155(A) |
申请公布日期 |
1994.04.05 |
申请号 |
US19910670811 |
申请日期 |
1991.03.18 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
WADA, TOMOHISA;MURAKAMI, SHUJI |
分类号 |
G11C29/28;G11C29/40;(IPC1-7):G11C29/00 |
主分类号 |
G11C29/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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