Plasma surface treatment method and apparatus

摘要

A surface treatment method and apparatus permitting the treatment of a film with plasma with a high treatment speed and a high efficiency without uselessly complicating the construction of a device for realizing it are disclosed. The area where the counter electrode is in contact with the plasma is sufficiently larger than the area where the rotating electrode is in contact therewith. The ratio of the areas is preferably not smaller than 1.5 and the etching speed may be increased to a value more than ten times as great as that obtained by a prior art method.