发明名称 Molybdenum enhanced low-temperature deposition of crystalline silicon nitride
摘要 A process for chemical vapor deposition of crystalline silicon nitride which comprises the steps of: introducing a mixture of a silicon source, a molybdenum source, a nitrogen source, and a hydrogen source into a vessel containing a suitable substrate; and thermally decomposing the mixture to deposit onto the substrate a coating comprising crystalline silicon nitride containing a dispersion of molybdenum silicide.
申请公布号 US5300322(A) 申请公布日期 1994.04.05
申请号 US19920849542 申请日期 1992.03.10
申请人 MARTIN MARIETTA ENERGY SYSTEMS, INC. 发明人 LOWDEN, RICHARD A.
分类号 C23C16/30;C23C16/34;(IPC1-7):C23C16/34;C23C16/42 主分类号 C23C16/30
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