发明名称 MBE or MO-MBE process for forming Bi-Sr-Ca-Cu-O superconducting thin films
摘要 A method of forming a Bi-Sr-Ca-Cu-O system (Bi2Sr2CaCu2Ox) superconducting thin film in which two half-unit cells constitute a Perovskite structure layer, characterized in that Sr and Bi layers, which are present between said half-unit cells, are each deposited without oxidation by using an MBE process or an MO-MBE process with an atomic layer level control capability. A critical current density of the Bi-Sr-Ca-Cu-O system superconducting thin film is not significantly reduced.
申请公布号 US5300484(A) 申请公布日期 1994.04.05
申请号 US19920851200 申请日期 1992.03.13
申请人 FUJITSU LIMITED 发明人 OTANI, SEIGEN
分类号 C01B13/14;C01G1/00;C01G29/00;C30B23/02;C30B25/02;H01B12/00;H01B13/00;H01L39/12;H01L39/24;(IPC1-7):B05D5/12;C30B23/00 主分类号 C01B13/14
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