发明名称 |
Source side injection non-volatile memory cell |
摘要 |
A source side injection non-volatile memory cell is provided that comprises a floating gate and control gate stack (12) disposed outwardly from a channel region (26) formed on an (n-)-substrate (10). Drain region (32) and source region (30) are formed on opposite sides of stack structure (12). Source side injection of hot electrons occurs between source region (30) and floating gate (18) when relatively low voltages are placed on gate conductor (22).
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申请公布号 |
US5300803(A) |
申请公布日期 |
1994.04.05 |
申请号 |
US19920992858 |
申请日期 |
1992.12.14 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
LIU, DAVID K. |
分类号 |
H01L21/336;H01L21/8247;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):H01L29/68;H01L29/78 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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