Method for forming a sputtered metal film

摘要

A method is disclosed for alloying a sputtered metal film by forming a sputtered metal film of first metal atoms over a semiconductor substrate through a first mask and implanting a first impurity of second metal atoms into the sputtered film. Then a second mask having at least one window is formed on the sputtered film by removing said first mask and a second impurity of third metal atoms is then implanted. The substrate and film are then heat treated to form a first alloy area in which the first metal atoms and the second metal atoms are mixed and a second alloy area in which the first metal atoms and the third metal atoms are mixed.