| 摘要 |
The present invention relates to a negative photoresist consisting essentially of a process for the production of relief structures using a) at least one solid film-forming polyphenol, b) at least one compound which contains at least two epoxide groups or at least two vinyl ether groups or at least one epoxide and vinyl ether group in the molecule, c) at least one cationic photoinitiator for component b) and d) if appropriate customary additives. The resist can be developed under aqueous-alkaline conditions.
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