发明名称 |
Hetero-epitaxially grown compound semiconductor substrate and a method of growing the same |
摘要 |
A method of growing a gallium arsenide single crystal layer on a silicon substrate comprises steps of growing a buffer layer of aluminium arsenide on the silicon substrate by atomic layer epitaxy, and growing the gallium arsenide single crystal layer on the buffer layer epitaxially.
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申请公布号 |
US5300186(A) |
申请公布日期 |
1994.04.05 |
申请号 |
US19920864552 |
申请日期 |
1992.04.07 |
申请人 |
FUJITSU LIMITED |
发明人 |
KITAHARA, KUNINORI;OHTSUKA, NOBUYUKI;OZEKI, MASASHI |
分类号 |
H01L21/205;H01L21/20;H01L21/203;(IPC1-7):C30B25/16 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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