APPARATUS FOR CHEMICAL VAPOUR PHASE DEPOSITION ACTIVATED BY A MICROWAVE PLASMA

摘要

An apparatus for chemical vapour phase deposition activated by a plasma comprises a microwave excited plasma reactor with a reaction chamber (10), a microwave generator (20), a wave guide (21) providing non-resonant coupling, and means (40-54) for introducing at least one flow of a predetermined gas mixture into said chamber. The introduction means comprise, in sequence, means (40-43) for transforming the state of a deposition material precursor to turn it to a gas, means (41, 42) for supplying a vector gas capable of acting as a gas precursor for forming said predetermined gas mixture. Means (18) for injecting the predetermined gas mixture into the chamber (10) comprise an externally frustroconical nozzle having an injection orifice at one end shaped according to the injection orifice and the configuration of the column of plasma formed, said nozzle having heating and thermal insulation means for the gas mixture.