| 摘要 |
Two semiconductor connecting contacts (10b,10c,11b,11c,12b,12c), at least partially overlapping, are provided on the surfaces of the diode wells (10a,11a,12a) of the same conductivity type but of stronger semiconductor material by virtue of being doped with foreign atoms. The wells are arranged in a semiconductor layer (5b) and are of differing conductivity types. This semiconductor layer (5b) is installed in part of an epitaxial layer (2) surrounded at the sides by an insulating ring (3a,3b). The semiconductor layer (5b) overlaps to touch at least part of the upper part of the latter. The resistance has a value of from 100 kilo to 1 giga ohms and has negative temp. coeffts. USE/ADVANTAGE - Simple to realise demanding relatively small surface area therefore small parasitic capacitance and leakage current w.r.t. semiconductor substrate. Integrated circuit usage with very low current consumption or in integrated circuits for measuring very low currents in order of 10 pico to 10 nano amps. Can compensate for temp. dependence of current amplification factor of bipolar transistors.
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