Semiconductor laser with multilayer structure - has current and light limiting sections either side of separation channel groove

摘要

The laser has a semiconductor substrate (101) carrying a multi-layer structure (140) and a current and light limiting device (150), with at least two multi-layer current and light limiting sections (151a,151b), each with a laser light transmission layer (107) and a laser light absorption layer (108). The two current and light limiting sections are separated via a channel groove (152) with a different refractive index for laser light with a transversal base mode. The multi-layer structure has an active layer (103) extending between each of the limiting sections and the separation groove exhibiting an optical limiting factor outside the latter which is greater for lase light in a guide mode than for laser light in an anti-guide mode. ADVANTAGE - Improved current and laser light limiting characteristics.