Halbleiterlaser mit einer zwischen zwei Resonatorspiegeln angeordneten aktiven Schicht und Verfahren zu seiner Herstellung

摘要

The aims of the invention are to standardize the manufacturing technology used for laser structures which radiate vertically or parallel to the surface of the substrate, to make the film structure of semiconductor lasers which radiate vertically to the surface of the substrate simple to manufacture, and to provide a solution to the problem of high track resistances in the two semiconductor lasers mentioned above. In both cases, this is achieved by positioning the plane in which the active film of the semiconductor laser is located such that the plane makes an angle different from 90 DEG , preferably an angle of 0 DEG , with the normal to the substrate surface. The invention is suitable for use in all fields in which semiconductor lasers are used.