| 摘要 |
<p>A flash non-volatile memory (34) in which writing is not concentrated on a portion of a memory is provided. A plurality of blocks accessible by a processor (10) are included and, in association with each block, a block ID representing an address (RBA) specified by the processor upon writing, a revision code (RC) indicating how many times the processor performed writing using the same RBA, and an erase count (EC) indicating the number of times of erasing of this block are stored. Writing is performed to a writable block having the minimum erase count, and if there is a different block having the same block ID as the address specified by the processor, its revision code is updated and used as a revision code of the written block, and the different block is erased and its erase count is updated. <IMAGE></p> |
