Recessed, self aligned, low base resistance structure.

摘要

A semiconductor device is manufactured with precisely formed base and emitter regions. This is accomplished by arranging a plurality of insulator layer portions to form a plurality of windows. A dopant is then applied to the semiconductor device between the windows in order to accurately position emitter regions relative to base regions. In this manner a base of controlled dimensions can be formed. Thus the parasitic resistance of the base can be reduced and the figure of merit (emitter periphery/base area) can be increased.