High purity gold bonding wire for semiconductor device

摘要

Bonding wire for a semiconductor device contains high purity Au or Au alloy as a base metal and 25-10000 atppm of low boiling point element I having a boiling point lower than a melting point of the base metal and soluble in Au, or contains high purity Au or Au alloy as a base metal and 5-500 atppm of low boiling point element II having a boiling point lower than a melting point of the base metal and insoluble in Au, or contains high purity Au or Au alloy as a base metal and 5-10000 atppm of a mixture of low boiling point element I having a boiling point lower than a melting point of the base metal and soluble in Au and low boiling point element II having a boiling point lower than the melting point of the base metal and insoluble in Au under the condition of (content of the low boiling point element I)/25+(content of the low boiling point element II)/5>=1>=(content of the low boiling point element I)/10000+(content of the low boiling point element II)/500. The low boiling point elements I and II may be replaced by low boiling point element III soluble in Pd and low boiling point element IV insoluble in Pd, respectively.