发明名称 |
Semiconductor device and method of fabricating same |
摘要 |
There is disclosed a semiconductor device having a vertical channel MOS gate structure wherein grooves (40) are formed from the top surface of source regions (5) through a body (3) into an N diffusion region (2) and wherein buried gate electrodes (4) fill an inner part of said grooves (40) which is in face-to-face relation to the N diffusion region (2) across gate oxide films (13) while buried oxide films (15) including diffusion source impurities fill an inner part thereof which is in face-to-face relation to the source regions (5). The impurity concentration of the source regions (5) is distributed uniformly in the vertical direction of the grooves (40) and decreases lateraly away from the grooves (40). A current flows through the source region along the grooves and a resistance thereagainst is held small in an ON-state. The grooves may be formed with narrow spacing. The size reduction and high integration of the semiconductor device are achieved as well as reduction in ON-resistance.
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申请公布号 |
US5298780(A) |
申请公布日期 |
1994.03.29 |
申请号 |
US19920980691 |
申请日期 |
1992.11.24 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
HARADA, MASANA |
分类号 |
H01L21/225;H01L21/336;H01L29/06;H01L29/08;H01L29/739;H01L29/78;(IPC1-7):H01L29/06 |
主分类号 |
H01L21/225 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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