| 摘要 |
PURPOSE:To obtain a nonvolatile memory which has large capacity and a sufficient write/read speed, and in which a ferroelectric substance thin film is not distorted by a method wherein a ferroelectric substance thin film is formed in a separated part between a source area and a drain area on a semiconductor layer and a memory electrode is formed on the ferroelectric substance thin film. CONSTITUTION:A source area 3 and a drain area 4 are separated and formed on the surface of a polycrystalline semiconductor layer. Each of contact layers 5, 6 is formed on both areas 3, 4, and a source electrode 7 and a drain electrode 8 are formed on the contact layers 5, 6. On the other hand, a ferroelectric substance thin film 9 is formed in a part separated between the source electrode and drain electrode, and a memory electrode 10 is formed on this ferroelectric substance thin film 9. Thus, this nonvolatile memory cell having a large area can be obtained. |
