DIFFUSION TIME CALCULATION AND SEMICONDUCTOR PRODUCING DEVICE THEREWITH

摘要

PURPOSE:To make it possible to automatically calculate impurity diffusion time. CONSTITUTION:A mean value (step 101) of initial junction capacity at a plurality of bias voltages is compared with the data stored in a storage device showing the relationship between the junction capacity and the impurity diffusion time in order to find out the impurity diffusion time corresponding to an optional junction capacity before desired junction capacity (step 104). Then, the impurity diffusion is repeated several times up to the desired junction capacity and at every times the junction capacity is measured (step 107) to find out the impurity diffusion time thereof (step 109), and further the impurity diffusion is performed several times up to the desired capacity to obtain a target junction capacity.