| 摘要 |
<p>PURPOSE:To stabilize the operation by reversing the polarity of the voltage that is applied between a source area and a drain area during writing, when the information is read out and applying a gate with sense voltage. CONSTITUTION:A gate 20 and a drain area 14 are applied with positive high voltage while a source area 13 is grounded, and hot electrons generating in the boundary between the area 14 and a channel area are locally injected into an area adjacent to the area 14 in an insulating film 19 to allow them to be captured, so that the information can be written. On the other hand, when the information is subject to reading out, the area 14 is grounded, the area 13 is applied with positive read voltage, and a gate 20 is applied with the specified sense voltage, so a channel 25 is formed directing from the area 14 to the area 13. At that time, in such a state where the hot electrons are being captured locally in the film 19, there may occur a time lag in forming the channel 25 adjacent to the area 14, resulting in ensuring a larger memory window.</p> |
