发明名称 |
Diamond heterojunction diode |
摘要 |
A diamond heterojunction diode having an improved rectifying characteristics with a small reverse current and a large forward current. Three layers are formed on a low-resistance p-type silicon substrate by the microwave plasma CVD in the order of a B-doped p type semiconducting diamond layer, an insulating undoped diamond layer (thinner than 1 (my)m), and an n-type semiconducting silicon layer. Ohmic electrodes are formed on the front side of a n-type semiconducting silicon layer and the back side of a substrate. Under a forward bias, the electric field is applied to the intermediate insulating layer to accelerate the transport of holes and electrons. Under a reversed bias, the energy band has a notch as well as a potential barrier due to the intermediate layer thus preventing holes from transporting from the n-type semiconducting diamond layer to the p-type semiconducting diamond layer, resulting in the improved rectifying characteristics.
|
申请公布号 |
US5298766(A) |
申请公布日期 |
1994.03.29 |
申请号 |
US19920854910 |
申请日期 |
1992.03.20 |
申请人 |
KABUSHIKI KAISHA KOBE SEIKO SHO |
发明人 |
KOBASHI, KOJI;NISHIMURA, KOZO;MIYAUCHI, SHIGEAKI;KUMAGAI, KAZUO;KATOH, RIE |
分类号 |
H01L21/205;H01L29/16;H01L29/861;(IPC1-7):H01L29/48;H01L29/56 |
主分类号 |
H01L21/205 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|