发明名称 |
Method of fabricating a flash memory cell |
摘要 |
A flash memory cell includes the usual thermal oxide layer deposited above the substrate including the source and the drain. On the thermal oxide layer, a silicon rich oxide layer is formed. Above the silicon rich oxide layer a gate structure is formed of layer of polysilicon separated by an intermediate dielectric layer. The lower polysilicon layer commences as an initial portion of the layer of small grain size followed by either amorphous or large grain size material.
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申请公布号 |
US5298447(A) |
申请公布日期 |
1994.03.29 |
申请号 |
US19930094744 |
申请日期 |
1993.07.22 |
申请人 |
UNITED MICROELECTRONICS CORPORATION |
发明人 |
HONG, GARY |
分类号 |
H01L21/336;H01L27/115;H01L29/788;(IPC1-7):H01L21/265 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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