Semiconductor element of high integration esp DRAM elements - comprises capacitor consisting of dielectric layer covering first electrode, an second electrode formed on dielectric layer

摘要

Semiconductor element comprises a capacitor consisting of a 1st electrode (90), a dielectric layer (92) covering the 1st electrode, and a 2nd electrode (94) formed on the dielectric layer. The 1st electrode has an electrode main part (64f) with a number of microtrenches and/or microcolumns and an outer wall surrounding the trenches and/or columns and an electrode column part (64') electrically connecting the electrode main part to a source region (44) of a transistor. The novelty is that the 1st electrode (90) has an electrode additional part (60a) in horizontal ribbed structure arranged under the electrode main part (64f) and is electrically connected to the main part (64'). The electrode column part goes through a middle region of the electrode additional part. Prodn. of the element is also claimed. USE/ADVANTAGE - In mfr. of DRAM elements. High integration is achieved.