| 摘要 |
The charge-coupled device includes a semiconductor substrate in which a first conductive type is doped; a channel area in which a second conductive type is doped in a low concentration; a plurality of first gates in which polysilicon layer and metal silicide layer are stacked by interposing a first insulating layer on the channel area; a second insulating layer in multilevel provided on the exposed portion of the channel area and the first channel gate; and a plurality of second gates made of metal on the second insulating layer on which the first gate is not formed, thereby increasing the operation speed.
|
