| 摘要 |
growing an oxide layer on a silicon substrate, and differentially etching the oxide layer to form a seed; forming an epitaxial layer on the seed, and planarizing the epitaxial layer by selective polishing; and forming a CVD oxide layer to pattern an active area, forming a gate on the patterned portion, performing ion-implantation to form a source/drain, and depositing a metal, thereby simplifying a manufacturing process.
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