| 发明名称 |
CHARACTERISTIC IMPROVEMENT METHOD OF HYDROGENATED AMORPHOUS SILICON TFT |
| 摘要 |
The method is disclosed wherein a hydrogenated amorphous silicon thin film transistor is processed with ultraviolet rays to improve the operation current characteristic of a transistor.
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| 申请公布号 |
KR940002407(B1) |
申请公布日期 |
1994.03.24 |
| 申请号 |
KR19910009895 |
申请日期 |
1991.06.15 |
| 申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE, JONG - YONG;BAE, BYONG - SONG |
| 分类号 |
H01L29/788;(IPC1-7):H01L29/788 |
主分类号 |
H01L29/788 |
| 代理机构 |
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代理人 |
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