Silicon-based microlaser by doped thin glass films.

摘要

A silicon-based microlaser formed of rare-earth-doped CaF2 thin films has a semiconductor substrate material (2.40) and a CaF2 film layers (234) grown on semiconductor substrate material (240). The CaF2 film layer (234) is doped with a predetermined amount of rare-earth-dopant that is sufficient to cause a spectral emission from the CaF2 film layer (234) having a narrow linewidth when the CaF2 film layer (234) is optically or electrically pumped. <IMAGE>