Integrated circuit magnetic memory element and method of making same.

摘要

Integrated circuit memory elements are fabricated by disposing a first layer of electrically conductive material on the surface of an electrically insulating substrate. The first layer of electrically conductive material is formed into a first predetermined pattern. A second layer of electrically insulating material is disposed on the surface of the electrically insulating substrate and the patterned first layer of electrically conductive material. A first layer of magnetizable material is disposed on the second insulating layer and is formed into a predetermined pattern having a predetermined positional relationship with respect to the underlying patterned first layer of electrically conductive material. A third layer of electrically insulating material is disposed over the second layer of insulating material and the patterned first layer of magnetizable material. Openings are formed in the underlying layers of insulating material to expose predetermined electrical contact areas on the underlying patterned first electrically conductive layer. A second electrically conductive layer is disposed over the third layer of electrically insulating material into the openings and into electrical contact with the exposed electrical contact areas of the underlying patterned first electrically conductive layer. The second electrically conductive layer is formed into a second predetermined pattern having a predetermined positional relationship with respect to the underlying patterned layer of magnetizable material and the patterned first electrically conductive layer. The patterned first electrically conductive layer and the patterned second electrically conductive layer define at least two conductive windings disposed about the patterned magnetizable material. <IMAGE>