发明名称 Semiconductor transistor.
摘要 <p>A semiconductor device has a transistor made of a semiconductor which has a source and drain regions, a channel region, a gate insulative film, and a gate electrode. The gate electrode is connected to a part of the channel region. The channel region has the same conductivity type as that of the source and drain regions and has an impurity concentration lower than that of the source and drain regions. &lt;IMAGE&gt;</p>
申请公布号 EP0588300(A2) 申请公布日期 1994.03.23
申请号 EP19930114756 申请日期 1993.09.14
申请人 CANON KABUSHIKI KAISHA 发明人 MORISHITA, MASAKAZU;SUGAWA, SHIGETOSHI;KOIZUMI, TORU
分类号 H01L21/331;H01L21/8249;H01L27/06;H01L27/07;H01L29/10;H01L29/73;H01L29/739;H01L29/78;H01L29/786;(IPC1-7):H01L29/76 主分类号 H01L21/331
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