发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME |
摘要 |
A semiconductor device has a substrate composed of a semiconductor which has one of sphalerite and diamond crystal structures. The substrate has a plane orientation inclined at 0.5 DEG to 15 DEG with respect to one of {111} and {110} planes indicated by Miller indices. A first semiconductor layer is formed on the substrate. The first semiconductor layer has a sawtooth-shaped first periodic structure consisting of one of the {111} and {110} planes indicated by the Miller indices and at least one plane indicated by another index. A second semiconductor layer is formed on the first semiconductor layer. The second semiconductor layer has a second periodic structure having a phase shifted from a phase of the first periodic structure. An embodiment of the semiconductor device is a distributed feedback diode laser incorporating a quantum-well or quantum-wire structure. |
申请公布号 |
EP0582986(A3) |
申请公布日期 |
1994.03.23 |
申请号 |
EP19930112727 |
申请日期 |
1993.08.09 |
申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
MIYAZAWA, SEIICHI;OHTSUKA, MITSURU;MIZUTANI, NATSUHIKO |
分类号 |
H01L29/12;H01L29/775;H01L33/16;H01S5/02;H01S5/10;H01S5/12;H01S5/183;H01S5/187;H01S5/30;H01S5/32;H01S5/34 |
主分类号 |
H01L29/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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