发明名称 Method and apparatus for manufacturing semiconductor devices.
摘要 <p>An improved semiconductor processing is disclosed. In the manufacturing process, just formed semiconductor layer undergoes photo annealing and latent dangling bonds are let appear on the surface and gaps, then neutralizer is introduced to the ambience of the semiconductor. The semiconductor thus formed demonstrates SEL effect in place of Staebler-Wronski effect.</p>
申请公布号 EP0211634(B1) 申请公布日期 1994.03.23
申请号 EP19860305952 申请日期 1986.08.01
申请人 SEL SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 YAMAZAKI, SHUNPEI;SUZUKI, KUNIO;NAGAYAMA, SUSUMU;INUJIMA, TAKASHI;ABE, MASAYOSHI;FUKADA, TAKESHI;KINKA, MIKIO;KOBAYASHI, IPPEI;SHIBATA, KATSUHIKO;SUSUKIDA, MASATO;KOYANAGI, KAORU
分类号 H01L21/30;H01L31/20;(IPC1-7):H01L31/18;H01L21/324 主分类号 H01L21/30
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