Method of making thin film transistors.

摘要

A thin film transistor is formed by depositing amorphous silicon (5,7) on an insulating substrate (1), forming a gate structure (11,13) including oxide (11) in the form of one or more oxide layers (113,115) contacting the silicon and a conducting region (13) separated from the silicon by the oxide, and then using a high-pressure oxidation to form an additional oxide layer (111) between the conducting region and the silicon, thus providing a high-quality gate oxide that has a layered structure.