| 摘要 |
In a field effect transistor, nonalloyed ohmic source-drain contacts (7, 8) are made possible, as the channel layer (3) is coated with lanthanide-arsenide which serves as contact-mediating layer and is covered with a very thin, conducting, monocrystalline, epitactic gallium-arsenide layer (10) on which nickel (11) is vaporized, an alloying step being dispensed with. |
