发明名称 In-situ monitoring, and growth of thin films by means of selected area CVD
摘要 A method for selectively forming thin films by CVD in which at least two substrates are exposed to a decomposable gas, and one of the subsrates is independently heated to selectively form a film on the heated substrate. The invention further comprises a step of measuring an electrical property of the film during deposition.
申请公布号 US5296255(A) 申请公布日期 1994.03.22
申请号 US19920835340 申请日期 1992.02.14
申请人 THE REGENTS OF THE UNIVERSITY OF MICHIGAN 发明人 GLAND, JOHN L.;SCHWANK, JOHANNES W.;WISE, KENSALL D.
分类号 C23C16/04;C23C16/46;C23C16/52;(IPC1-7):C23C16/00 主分类号 C23C16/04
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