发明名称 |
In-situ monitoring, and growth of thin films by means of selected area CVD |
摘要 |
A method for selectively forming thin films by CVD in which at least two substrates are exposed to a decomposable gas, and one of the subsrates is independently heated to selectively form a film on the heated substrate. The invention further comprises a step of measuring an electrical property of the film during deposition.
|
申请公布号 |
US5296255(A) |
申请公布日期 |
1994.03.22 |
申请号 |
US19920835340 |
申请日期 |
1992.02.14 |
申请人 |
THE REGENTS OF THE UNIVERSITY OF MICHIGAN |
发明人 |
GLAND, JOHN L.;SCHWANK, JOHANNES W.;WISE, KENSALL D. |
分类号 |
C23C16/04;C23C16/46;C23C16/52;(IPC1-7):C23C16/00 |
主分类号 |
C23C16/04 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|