| 摘要 |
PURPOSE:To analyze the cross-sectional structure of a sample in a nondestructive manner. CONSTITUTION:The sample having a resist film 9 formed thereon on bear silicon 10 is irradiated with the electron beam 2 from an electron beam part 1. Next, the surface of the sample is scanned and, on the basis of the analytical peak detected from the scanned area, it is cleared that foreign matter 8 is present at a point where an element considered to be detected from the bear silicon 10 and the resist film 9 appears. By this method, the position of the foreign matter 8 present in the resist film 9 is calculated and irradiated with the electron beam 2. At this time, the position of the foreign matter 8 is irradiated with accelerating voltage at least making the range of the electron beam 2 shorter than the thickness of the resist film 9. The analytical peak at this time is preliminarily detected. Next, the accelerating voltage is continuously made high and the analytical peaks at the time of predetermined accelerating voltage are calculated at least three times. By combining those analytical peaks, the foreign matter 8 is identified. |
