| 摘要 |
An insulated gate bipolar transistor assembly (10) in accordance with the invention includes an insulated gate bipolar transistor die (32) having gate, at least one emitter and collector electrodes and first and second opposed surfaces; a heat conductive electrically insulative substrate (30) thermally coupled to the first surface for conducting heat away from the first surface of the die and having contacts for conducting electric current between the gate electrode and a gate terminal (16) and a collector electrode and a collector terminal (18) of the assembly; a first heat radiator (12) thermally coupled to the substrate for radiating heat flowing from the first surface of the die through the heat conductive insulative substrate; a heat conductive electrical insulator (46) having first and second surfaces with the first surface being thermally coupled to the second surface of the die and a plurality of apertures (51) aligned with the emitter electrode (44) of the die; an emitter contact (52) disposed on the second surface of the heat conductive insulator having a plurality of spring contacts (54) extending through the apertures of the insulator for conducting electric current between the emitter electrode and an emitter terminal of the assembly; and a second heat radiator (62) which is electrically insulative and thermally coupled to the emitter contact for radiating heat flowing from the second surface of the die through the emitter contact.
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