| 摘要 |
An improved sense amplifier for a computer having non-volatile memories, each non-volatile memory having an array of memory cells, each cell having a drain, and the drains of all the cells for one column of cells connected to a drain-column line, The sense amplifier reads the state of the memory cell by a) sensing a reference current; b) providing drain-column voltage swings during the reference current sensing; c) sensing the current on the drain-column line; d) producing voltages above and below a reference voltage whereas the produced voltages represent the state of the memory cell; and, e) adjusting the bias of the biasing transistors in response to the produced voltages.
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