发明名称 |
Method of making n-channel and p-channel junction field-effect transistors and CMOS transistors using a CMOS or bipolar/CMOS process |
摘要 |
A method of making N-channel and P-channel junction field-effect transistors using a modified CMOS process that simultaneously makes complementary metal-oxide-semiconductor transistors, or a modified BiCMOS process that simultaneously makes bipolar transistors and complementary metal-oxide-semiconductor transistors. Making junction field effect transistors using the basic CMOS process requires mask changes and an additional mask, etch, and implant step. Making junction field effect transistors using the BiCMOS process only requires mask changes.
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申请公布号 |
US5296409(A) |
申请公布日期 |
1994.03.22 |
申请号 |
US19920880677 |
申请日期 |
1992.05.08 |
申请人 |
NATIONAL SEMICONDUCTOR CORPORATION |
发明人 |
MERRILL, RICHARD B.;FARRENKOPF, DOUG R. |
分类号 |
H01L21/8232;H01L21/8238;H01L21/8249;H01L27/06;H01L27/092;(IPC1-7):H01L21/265 |
主分类号 |
H01L21/8232 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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