Semiconductor memory device

摘要

In reading data, data is transferred to data registers starting from a data read start address to the last address at a row (page), and data at the next page is transferred to the data registers starting from a start address to the last address at that page. These operations are repeated. In writing data from an intermediate address of a page, predetermined data is written in data registers not having write data. It is possible to read data at consecutive pages from a first predetermined column address to the page last address, and to read data at consecutive pages from a second predetermined column address to the page last address. For the data structure having a first data structure and a second data structure, it is possible to continuously read a set of data having both the first and second data structures and a set of data having only the second data structure, improving the efficiency of a system using a semiconductor memory device.