Hetero junction bipolar transistor with improved electrode wiring contact region

摘要

A hetero junction bipolar transistor provides a contact area an area between an emitter (or collector) electrode and a wiring formed on the electrode that is larger than that of the emitter (or collector). A variation in voltage applied to an emitter (or collector)-base junctions is prevented and a stable operation of the transistor is attained. In addition, when an etching operation is carried out, an insulation film is formed on a side part of a mask. A patterning of the emitter (or collector) is then carried out and thus an emitter (or collector) having a size approximate to that of the mask is formed.